DMN62D0LFB-7B advance information new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 60v 2 ? @ v gs = 4v 100ma 2.5 ? @ v gs = 2.5v 50ma description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1006-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) x1-dfn1006-3 bottom view top view pin-out source gate protection diode gate drai n equivalent circuit esd protected d s g s m d ty p e mosfets mos mosfets mos
advance information new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 4.0v steady state t a = 25c t a = 70c i d 100 75 ma pulsed drain current (note 5) i dm 200 ma thermal characteristics characteristic symbol max unit power dissipation (note 4) p d 0.47 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 258 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 60 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 60v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 5v, v ds = 0v - - 500 na v gs = 10v, v ds = 0v - - 2.0 a v gs = 15v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.6 - 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 1.3 2 v gs = 4v, i d = 100ma - 1.5 2.5 v gs = 2.5v, i d = 50ma - 1.9 3 v gs = 1.8v, i d = 50ma - 2.6 - v gs = 1.5v, i d = 10ma forward transfer admittance |y fs | - 0.8 - s v ds = 10v, i d = 200ma diode forward voltage v sd - 0.9 1.3 v v gs = 0v, i s = 115ma dynamic characteristics (note 7) input capacitance c iss - 32 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4.4 - reverse transfer capacitance c rss - 2.9 - gate resistance r g - 126 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 0.45 - nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q g s - 0.08 - gate-drain charge q g d - 0.08 - turn-on delay time t d ( on ) - 3.4 - ns v gs = 10v, v ds = 30v, r l = 150 ? , r g = 25 ? , i d = 200ma turn-on rise time t r - 3.4 - ns turn-off delay time t d ( off ) - 26.4 - ns turn-off fall time t f - 16.3 - ns notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 5. repetitive rating, pulse width limited by junction temperature. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing. s m d ty p e mosfets mos mosfets mos
advance information new product 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 1 typical output characteristics ds i , drain current (a) d i (a) @ v =4.0v dgs i (a) @ v =4.5v dgs i (a) @ v =2.5v dgs i (a) @ v =3.0v dgs i (a) @ v =1.5v dgs i (a) @ v =2.0v dgs i (a) @ v =1.8v dgs 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i , drain current (a) d 0 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ( ) ave @ v =2.5v ds(on) g r ( ) ave @ v =4.5v ds(on) g r ( ) ave @ v =1.8v ds(on) g r ,d r ai n -s o u r c e o n - r esis t a n c e( ) ds(on) 0 0.1 0.2 0.3 0.4 i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) 0.1 1 10 v = 5.0v gs a ve r() @ 150c ds(on) ? ave r() @ -55c ds(on) ? ave r() @ 25c ds(on) ? ave r() @ 85c ds(on) ? ave r() @ 125c ds(on) ? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , static drain-source on-resistance ( ) ds(on) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 gate threshold variation vs. ambient temperature v , gate threshold voltage (v) th s m d ty p e mosfets mos mosfets mos
advance information new product 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 v , source-drain voltage (v) sd fig. 7 diodes forward voltage vs. current i (a) s 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 v , drain-source voltage (v) ds fig. 8 typical junction capacitance c , junction capacitance (pf) t 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 q (nc) g fig. 9 gate charge characteristics v (v) gs v =10v, i =250ma ds d 0.001 0.01 0.1 1 0.1 1 10 100 v , drain-source voltage (v) ds fig. 10 soa, safe operation area i , drain current (a) d 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 11 transient thermal resistance 0.001 0.01 0.1 1 r(t), transient thermal resistance r(t) @ d=0.005 r(t) @ d=single pulse r(t) @ d=0.01 r(t) @ d=0.02 r(t) @ d=0.05 r(t) @ d=0.1 r(t) @ d=0.3 r(t) @ d=0.5 r(t) @ d=0.7 r(t) @ d=0.9 r (t)=r(t) * r ? ja ja r =273 c/w duty cycle, d=t1 / t2 ja s m d ty p e mosfets mos mosfets mos
advance information new product package outline dimensions suggested pad layout x1-dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z s m d ty p e mosfets mos mosfets mos
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